Non-equilibrium current and electron pumping in nanostructures
نویسنده
چکیده
We discuss a numerical method to study electron transport in mesoscopic devices out of equilibrium. The method is based on the solution of operator equations of motion, using efficient Chebyshev time propagation techniques. Its peculiar feature is the propagation of operators backwards in time. In this way the resource consumption scales linearly with the number of states used to represent the system. This allows us to calculate the current for non-interacting electrons in large one-, twoand three-dimensional lead-device configurations with time-dependent voltages or potentials. We discuss the technical aspects of the method and present results for an electron pump device and a disordered system, where we find transient behaviour that exists for a very long time and may be accessible to experiments. Electron transport through mesoscopic devices contacted to leads is intensely studied in chemistry and physics (see e.g. Refs. [1, 2]). The conceptual basis for theoretical studies is the non-equilibrium Green function (Keldysh) formalism [3]. The Meir-Wingreen-formula [4] allows for the calculation of steady state currents. For time-dependent potentials or gate voltages the calculation of a current is a serious problem already for non-interacting electrons. One crucial point in most approaches is that the resource consumption scales quadratically with the number of system sites, since each Green function Gij(t, t ′) or operator product c†i (t)cj(t ′) has two site indices. The necessity to study large systems conflicts with the rapid growth of computational demands, especially if long leads with long recurrence time are required. Recent studies therefore addressed mainly one-dimensional (1D) situations, e.g. by time-propagation of operator expectation values or of several single-particle eigenstates [5–7]. In the present contribution we numerically solve the equation of motion for a single fermion operator. In contrast to previous studies, the initial time coordinate is propagated backwards in time. Then the computational effort, in particular the memory consumption, scales linearly with the number of lattice sites used to represent device and leads. This allows us to calculate the non-equilibrium current even for large systems that could not be treated otherwise. We consider the following situation: A device of Lx × Ly × Lz-sites is contacted to two long leads extending along the x-direction (see figure 1). This slab geometry includes the 2D (Lz = 1) and 1D (Ly = Lz = 1) case. For the kinetic energy in the Hamiltonian
منابع مشابه
Simulation of Direct Pumping of Quantum Dots in a Quantum Dot Laser
In this paper, the nonlinear rate equations governing a quantum dot laser isused to simulate the transient as well as the steady-state behaviors of the laser.Computation results show that the rate equations are capable of simulating true behaviorof a quantum dot laser. Then, the pump rates of the rate equations (which show indirectelectrical pumping of the quantum dots through a wetting layer) ...
متن کاملNumerical Study of Non - Equilibrium Air Dissociation For Calculation of Electron Density in Hypersonic Flow
متن کامل
Monte Carlo Modeling of Heat Generation in Electronic Nanostructures
This work develops a Monte Carlo (MC) simulation method for calculating the heat generation rate in electronic nanostructures. Electrons accelerated by the electric field scatter strongly with optical phonons, yet heat transport in silicon occurs via the faster acoustic modes. The MC method incorporates the appropriate energy transfer rates from electrons to each phonon branch. This accounts fo...
متن کاملPumping Heat with Quantum Ratchets
We describe how adiabatically rocked quantum electron ratchets can act as heat pumps. In general, ratchets may be described as non-equilibrium systems in which directed particle motion is generated using spatial or temporal asymmetry. In a rocked ratchet, which may also be described as a non-linear rectifier, an asymmetric potential is tilted symmetrically and periodically. The potential deform...
متن کاملImpact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2009